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100 ns Inductive Fall Time @ 25_C (Typ) 125 ns Inductive Crossover Time @ 25C (Typ) Operating Temperature Range -65 to + 150_C 100_C Performance Specified for: * Switching Regulators * Inverters * Solenoid and Relay Drivers * Motor Controls * Deflection Circuits Fast Turn-Off Times
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The MJE5850, MJE5851 and the MJE5852 transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
SWITCHMODE Series PNP Silicon Power Transistors
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C
Base Current -- Continuous Peak (1)
Collector Current -- Continuous Peak (1)
Emitter Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
Rating
Characteristic
v 10%.
VCEO(sus)
Symbol
TJ, Tstg
VCEV
VEB
IC ICM
IB IBM
PD
MJE5850
Symbol
RJC
350
300
TL
- 65 to 150
MJE5851
0.640
400
350
4.0 8.0
8.0 16
6.0
80
8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS
1.25
Max
275
MJE5850 MJE5851* MJE5852 *
*Motorola Preferred Device
MJE5852
CASE 221A-06 TO-220AB
450
400
Order this document by MJE5850/D
_C/W
Watts
W/_C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
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MJE5850 MJE5851 MJE5852
* Pulse Test: PW = 300 s. Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS SECOND BREAKDOWN OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Fall Time
Crossover Time
Storage Time
Inductive Load, Clamped (Table 1)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 1)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Base-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 1.0 Adc) (IC = 8.0 Adc, IB = 3.0 Adc) (IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
DC Current Gain (IC = 2.0 Adc, VCE = 5 Vdc) (IC = 5.0 Adc, VCE = 5 Vdc)
Clamped Inductive SOA with base reverse biased
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C)
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0)
2
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, VBE(off) = 5 Vdc, tp = 50 s, Duty Cycle (VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A, tp = 50 s, Duty Cycle 2%) (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 25_C) (ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A, VBE(off) = 5 Vdc, TC = 100_C) Characteristic
v 2%
v
MJE5850 MJE5851 MJE5852
v 2%)
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICER ICEV Cob hFE IS/b tsv tsv td tfi tfi tr tf tc tc ts Min 300 350 400 15 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.125 0.100 0.025 0.60 0.11 Typ 270 0.5 0.1 0.4 0.8 -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 13 See Figure 12 0.1 Max 1.5 3.0 0.5 2.0 0.5 0.1 1.5 1.5 2.0 5.0 2.5 1.0 3.0 0.5 2.5 -- -- -- -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc pF s s s s s s s s s s --
MJE5850 MJE5851 MJE5852
TYPICAL ELECTRICAL CHARACTERISTICS
200 100 hFE , DC CURRENT GAIN 70 50 30 20 VCE = 5 V 10 7.0 5.0 3.0 2.0 0.1 TJ = 150C TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6 IC = 0.25 A 1.2 1.0 A 2.5 A 5.0 A
0.8
TJ = 25C
0.4
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
0 0.01
0.02
0.05
2.0 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMPS)
5.0
10
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
2.0
1.6 IC/IB = 4 1.2 V, VOLTAGE (VOLTS)
1.6
IC/IB = 4
1.2
0.8
TJ = 150C
0.8
TJ = 25C
0.4 0 0.1 TJ = 25C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
0.4 0 0.1
TJ = 150C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Voltage
105 IC, COLLECTOR CURRENT (nA) 104 TJ = 150C 103 100C 102 101 100 + 0.2 REVERSE 25C + 0.1 0 - 0.1 - 0.2 - 0.3 - 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) - 0.5 FORWARD VCE = 200 V C, CAPACITANCE (pF)
3000 2000 TJ = 25C 1000 500 Cob 200 100 50 30 0.1 0.2 0.5 1.0 5.0 10 20 50 100 200 500 1000 VR, REVERSE VOLTAGE (VOLTS) Cib
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJE5850 MJE5851 MJE5852
Table 1. Test Conditions for Dynamic Performance
VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
+V 50 F +- 0.0025 F 0.2 F 500 1/2 W 500 1/2 W 1N4934 0.0033 F 500 1/2 W 12W MJE15028 0.1 F - - V adjusted to obtain desired IB1 + V adjusted to obtain desired VBE(off)
CIRCUIT VALUES
Lcoil = 180 H Rcoil = 0.05 VCC = 20 V IB1
-10 V 20
0.1 F MJE15029
TURN-ON TIME 1 2
1
INPUT CONDITIONS
0
0.1 F
2
INPUT +V 0 50 2W 500 1/2 W 0.2 F
1 2
PW Varied to Attain IC = 100 mA
IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME Use inductive switching driver as the input to the resistive test circuit.
+
50 F -V
VCC = 250 V RL = 62 Pulse Width = 10 s
Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7
Vclamp = 250 V RB adjusted to attain desired IB1
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS IC t1 Adjusted to Obtain IC ICM t1 VCE tf t2 VCEM TIME t2 Vclamp t tf Clamped t t1 Lcoil (ICM) VCC Lcoil (ICM) VClamp 1 2
RESISTIVE TEST CIRCUIT
TEST CIRCUITS
TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 1N4937 OR EQUIVALENT Vclamp RS = 0.1
Rcoil Lcoil VCC
TUT RL VCC
Test Equipment Scope -- Tektronix 475 or Equivalent
1.0 tc 100C t c , CROSSOVER TIME (s) 0.8 tsv 100C IC = 4 A IC/IB = 4 TJ = 25C tsv 25C
3.0 2.7 t sv, VOLTAGE STORAGE TIME (s) 2.4 2.1
IB VCE IC
10% 90% IB1 VCEM tsr trv
tc tfi
10% 2% ICM ICM tti
0.6
1.8 1.5
0.4
1.2 0.9
90% ICM ICM TIME VCEM
0.2
tc 25C
0.6 0.3
Vclamp 0 0 1 2 3 4 5 6 7 8 VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
Figure 7. Inductive Switching Measurements
Figure 8. Inductive Switching Times
4
Motorola Bipolar Power Transistor Device Data
MJE5850 MJE5851 MJE5852
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 - 90% VCEM tfi = Current Fall Time, 90 - 10% ICM tti = Current Tail, 10 - 2% ICM tc = Crossover Time,10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222A: PSWT = 1/2 VCCIC(tc)f In general, trv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (t c and t sv) which are guaranteed at 100_C.
]
1.0 0.7 0.5 0.3 0.2 t, TIME ( s) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 td tr
10 VCC = 250 V IC/IB = 4 TJ = 25C t, TIME ( s) 0.7 ts 0.4 0.3 0.2 VCC = 250 V IC/IB = 4 VBE(off) = 5 V TJ = 25C tf 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.3 0.5 0.7 1.0 2.0 4.0 7.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn-On Switching Times
Figure 10. Turn-Off Switching Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 ZJC(t) = r(t) RJC RJC = 1.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2 5 t, TIME (ms) 10 20 50 P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1k
0.01 0.01
Figure 11. Typical Thermal Response [ZJC(t)]
Motorola Bipolar Power Transistor Device Data
5
MJE5850 MJE5851 MJE5852
The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. 20 IC, COLLECTOR CURRENT (AMPS) 10 5.0 5 ms 2.0 1.0 0.5 0.2 0.1 0.05 0.02 BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT MJE5850 MJE5851 MJE5852 7.0 10 200 300 400 500 20 40 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25C dc 1 ms 100 s
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS
Figure 12. Maximum Forward Bias Safe Operating Area
8.0 IC, COLLECTOR CURRENT (AMPS) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 MJE5850 MJE5851 MJE5852 IC/IB = 4 VBE(off) = 2 V to 8 V TJ = 100C
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the RBSOA characteristics.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. RBSOA, Maximum Reverse Bias Safe Operating Area
3.5 IC = 4 A IB1 = 1 A TJ = 25C
1 0.8 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
3.0 IB2(pk) (AMPS)
2.5
0.6 THERMAL DERATING 0.4
2.0
1.5
0.2 0
1.0
0
2
4
6
8
20
40
60
80
100
120
140
160
VBE(off), BASE-EMITTER VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (C)
Figure 14. Peak Reverse Base Current
Figure 15. Forward Bias Power Derating
6
Motorola Bipolar Power Transistor Device Data
MJE5850 MJE5851 MJE5852
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
CASE 221A-06 TO-220AB ISSUE Y
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
Motorola Bipolar Power Transistor Device Data
7
MJE5850 MJE5851 MJE5852
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8
Motorola Bipolar Power Transistor Device Data
*MJE5850/D*
MJE5850/D

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